NON-VOLITILE MEMORY DEVICE

摘要

PURPOSE: A nonvolatile memory device is provided to reduce parasitic capacitance by arranging floated bit lines around a bit line to which a program basis voltage is applied. CONSTITUTION: A first source selecting unit(103A) transmits a boosting voltage applied to a common source line to a first cell array in response to a first source selection signal. A first drain selecting unit(101A) disconnects the bit line from the first cell array in response to a first drain selection signal. A second source selecting unit disconnects the common source line from a second cell array. A second drain selecting unit(101B) transmits a program basis voltage to the second array through a second bit line in response to a second drain selection signal.