| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resistance change memory capable of making a cell size microfine. <P>SOLUTION: A resistance change memory 10 includes: a plurality of word lines extending in a first direction; first to third bit lines extending in a second direction; a plurality of variable resistance elements 20 connected to the first and third bit lines; a plurality of active regions AA provided in a semiconductor substrate 30 and extending in a diagonal direction; a plurality of selection transistors 21 provided in the plural active regions AA and connected to the variable resistance elements 20; and a plurality of contact plugs 37 connecting the selection transistors and the third bit line. The plural variable resistance elements 20 comprise a group of first variable resistance elements arranged below the first bit line and between the plural word lines in line with the second direction; and a group of second variable resistance elements arranged below the third bit line and between the plural word lines in line with the second direction. <P>COPYRIGHT: (C)2013,JPO&INPIT |
