| 摘要 |
<p>The present invention provides a power semiconductor module (1) comprising an electrically conducting base plate (2), an electrically conducting top plate, arranged in parallel to the base plate (2) and spaced apart from the base plate (2), at least one power semiconductor device (3), which is arranged on the base plate (2) in a space formed between the base plate (2) and the top plate, and at least one presspin (5, 7), which is arranged in the space formed between the base plate (2) and the top plate to provide contact between the semiconductor device (3) and the top plate, whereby a metallic protection plate (11) is provided at an inner face of the top plate facing towards the base plate (2), whereby the material of the protection plate (11) has a melting temperature higher than the melting temperature of the top plate. The present invention further provides a power semiconductor module assembly, comprising multiple power semiconductor modules (1) as mentioned above, whereby the power semiconductor modules (1) are arranged side by side to each other with electric connections between adjacent power semiconductor modules (1).</p> |
