| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device incorporating a depletion type Gan-HEMT and an enhancement type MOS-FET cascade-connected to each other, which does not have a parasitic inductance and is improved in reliability.SOLUTION: A semiconductor device 10A includes: a lead frame composed of leads 11, 12, 13 and 14 and a die stage 15; a GaN-HEMT 31 provided on the die stage 15 and having a source electrode 37 installed on the rear face which is connected to the die stage 15; and a MOS-FET 21 provided on the die stage 15 and having a drain electrode 62 installed on the rear face which is connected to the die stage 15. The source electrode 37 of the GaN-HEMT 31 and the drain electrode 62 of the MOS-FET 21 are cascade-connected to each other via the die stage 15. |
