发明名称 |
Semiconductor structure having an integrated quadruple-wall capacitor for embedded dynamic random access memory (eDRAM) and method to form the same |
摘要 |
Semiconductor structures having integrated quadruple-wall capacitors for eDRAM and methods to form the same are described. For example, an embedded quadruple-wall capacitor includes a trench disposed in a first dielectric layer disposed above a substrate. The trench has a bottom and sidewalls. A quadruple arrangement of metal plates is disposed at the bottom of the trench, spaced apart from the sidewalls. A second dielectric layer is disposed on and conformal with the sidewalls of the trench and the quadruple arrangement of metal plates. A top metal plate layer is disposed on and conformal with the second dielectric layer.
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申请公布号 |
US8519510(B2) |
申请公布日期 |
2013.08.27 |
申请号 |
US201113165615 |
申请日期 |
2011.06.21 |
申请人 |
DOYLE BRIAN S.;SHAH UDAY;SURI SATYARTH;CHEBIAM RAMANAN V.;INTEL CORPORATION |
发明人 |
DOYLE BRIAN S.;SHAH UDAY;SURI SATYARTH;CHEBIAM RAMANAN V. |
分类号 |
H01L29/92 |
主分类号 |
H01L29/92 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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