| 摘要 |
Provided is a semiconductor device having excellent moisture resistance and excellent high-temperature storage characteristics. The semiconductor device comprises a lead frame having a die pad section and an inner lead section, as a substrate, and has: a semiconductor element mounted on the die pad section; an electrode pad provided in the semiconductor element; a copper wire connecting the inner lead section and the electrode pad, provided on the substrate; and a sealing resin that seals the semiconductor element and the copper wire. An area of the electrode pad at least within the range of no more than 3µm from the joining surface of the copper wire, in the depth direction, includes as the main component thereof a metal having a smaller ionization tendency than aluminum; and the sulfur content in the copper wire is 15-100 ppm relative to the copper wire overall. |
