| 摘要 |
PURPOSE: A method is provided to minimize the conduction loss of the IGBT(Insulated Gate Bipolar Transistor) by selecting a sinusoidal pulse width modulation or a space vector pulse width modulation. CONSTITUTION: A voltage modulation index and a power factor of an inverter are calculated(10). The difference value between the conduction loss of the IGBT due to the space vector pulse width modulation and the conduction loss of the IGBT due to the sinusoidal pulse width modulation is calculated by using the voltage modulation index and the power factor(20,30). If the calculated difference value is greater than 0, the space vector pulse width modulation is selected. If the calculated difference value is less than or equal to 0, the sinusoidal pulse modulation is selected. |
