发明名称 |
Split-channel transistor and methods for forming the same |
摘要 |
A Fin Field-Effect Transistor (FinFET) includes a fin, which includes a channel splitter having a first bandgap, and a channel including a first portion and a second portion on opposite sidewalls of the channel splitter. The channel has a second bandgap smaller than the first bandgap. A gate electrode includes a first portion and a second portion on opposite sides of the fin. A gate insulator includes a first portion between the first portion of the gate electrode and the first portion of the channel, and a second portion between the second portion of the gate electrode and the second portion of the channel. |
申请公布号 |
US8604518(B2) |
申请公布日期 |
2013.12.10 |
申请号 |
US201113307738 |
申请日期 |
2011.11.30 |
申请人 |
BHUWALKA KRISHNA KUMAR;DOORNBOS GERBEN;PASSLACK MATTHIAS;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
BHUWALKA KRISHNA KUMAR;DOORNBOS GERBEN;PASSLACK MATTHIAS |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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