发明名称 |
Method of manufacturing semiconductor device including removal of deposits from process chamber and supply portion |
摘要 |
A method of manufacturing a semiconductor device has: carrying a substrate into a process chamber; depositing a thin film on the substrate by supplying inside the process chamber a first film deposition gas including at least one element among plural elements forming a thin film to be deposited and capable of accumulating a film solely and a second film deposition gas including at least another element among the plural elements and incapable of accumulating a film solely; carrying the substrate on which is deposited the thin film out from inside the process chamber; and removing a first sediment adhering to an interior of the process chamber and a second sediment adhering to an interior of the supply portion and having a chemical composition different from a chemical composition of the first sediment by supplying cleaning gases inside the process chamber and inside a supply portion that supplies the first film deposition gas while changing at least one of a supply flow rate, a concentration, and a type between a cleaning gas to be supplied inside the process chamber and a cleaning gas to be supplied inside the supply portion. |
申请公布号 |
US8679989(B2) |
申请公布日期 |
2014.03.25 |
申请号 |
US20070224879 |
申请日期 |
2007.03.27 |
申请人 |
NAKASHIMA SADAO;MAEDA TAKAHIRO;MAEDA KIYOHIKO;KAMEDA KENJI;TAKASAWA YUSHIN;HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
NAKASHIMA SADAO;MAEDA TAKAHIRO;MAEDA KIYOHIKO;KAMEDA KENJI;TAKASAWA YUSHIN |
分类号 |
H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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