| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with a small leakage current, and a method of manufacturing the semiconductor device.SOLUTION: According to an embodiment of the invention, the semiconductor device comprises: a first nitride semiconductor layer; a second nitride semiconductor layer that is provided on the first nitride semiconductor layer and that has a larger bandgap than that of the first nitride semiconductor layer; a third nitride semiconductor layer provided on the second nitride semiconductor layer; an insulator film that is provided on the third nitride semiconductor layer and that is in contact with the third nitride semiconductor layer; an ohmic electrode; and a Schottky electrode. A surface region of the third nitride semiconductor layer, which is between the ohmic electrode and the Schottky electrode, contains a chemical element that is different from a constituent element of the third nitride semiconductor layer at a higher concentration than that in a region nearer to the side of the second nitride semiconductor layer than the surface region. |
