Optoelectronic semiconductor chip

摘要

An optoelectronic semiconductor chip, the latter includes a carrier and a semiconductor layer sequence grown on the carrier. The semiconductor layer sequence is based on a nitride-compound semiconductor material and contains at least one active zone for generating electromagnetic radiation and at least one waveguide layer, which indirectly or directly adjoins the active zone. A waveguide being formed. In addition, the semiconductor layer sequence includes a p-cladding layer adjoining the waveguide layer on a p-doped side and/or an n-cladding layer on an n-doped side of the active zone. The waveguide layer indirectly or directly adjoins the cladding layer. An effective refractive index of a mode guided in the waveguide is in this case greater than a refractive index of the carrier.

主权项

1. An optoelectronic semiconductor chip comprising:
a carrier; and a semiconductor layer sequence mounted on the carrier, the semiconductor layer sequence based on a nitride compound semiconductor material and comprising:
an active zone configured to generate electromagnetic radiation,a waveguide layer adjoining the active zone, a waveguide being formed by the waveguide layer and the active zone, anda cladding layer comprising a p-cladding layer adjoining the waveguide layer on a p-doped side and/or an n-cladding layer on an n-doped side of the active zone, wherein an effective refractive index in the waveguide is greater than a refractive index of the carrier, wherein an evanescent field of the radiation totally reflected at the p-cladding layer or at the n-cladding layer and generated in the active zone extends as far as into the carrier, and wherein an amplitude of the evanescent field in the carrier, relative to an output amplitude at a totally reflecting boundary surface, amounts in places to at least 2.5%.