发明名称 GATE DRIVE CIRCUIT AND DISPLAY APPARATUS HAVING THE SAME
摘要 A gate drive circuit includes a shift register having a plurality of stages, in which an n-th stage (‘n’ is a natural number) of the plurality of stages is connected to at least one subsequent stage. The n-th stage includes a pull-up part configured to output a high voltage of an n-th gate signal using a high voltage of a clock signal as in response to a high voltage of a control node, a control pull-down part configured to pull-down a voltage of the control node into a low voltage in response to a carry signal outputted from at least one of next stages of the n-th stage and receiving a back-bias voltage corresponding to the low voltage, and a carry part configured to output the high voltage of the clock signal as an n-th carry signal in response to a high voltage of the control node.
申请公布号 US2015029082(A1) 申请公布日期 2015.01.29
申请号 US201414276801 申请日期 2014.05.13
申请人 Samsung Display Co., LTD. 发明人 JEON Sang-Jin;JEONG Jun-Ki;CHO Se-Hyoung
分类号 G09G3/36;G11C19/28 主分类号 G09G3/36
代理机构 代理人
主权项 1. A gate drive circuit comprising: a shift register including a plurality of stages, wherein an n-th stage (‘n’ is a natural number) of the plurality of stages is connected to at least one subsequent stage of the plurality of stages, the n-th stage comprising: a pull-up part configured to output a high voltage of an n-th gate signal using a high voltage of a clock signal in response to a high voltage of a control node; a control pull-down part configured to pull-down a voltage of the control node into a low voltage in response to a carry signal outputted from the at least one subsequent stage of the n-th stage and receiving a back-bias voltage corresponding to the low voltage; and a carry part outputting the high voltage of the clock signal as an n-th carry signal in response to a high voltage of the control node.
地址 Yongin-City KR