INSULATED-GATE BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

An insulated-gate bipolar transistor and manufacturing method thereof, comprising: a first conductivity type semiconductor substrate (1) having a first primary surface (1S1) and a second primary surface (1S2), a first conductivity type first semiconductor layer (5) formed on the first primary surface (1S1) side of the active region (2) of semiconductor substrate (1), and the doping concentration of first semiconductor layer (5) being higher than the doping concentration of semiconductor substrate (1); an insulated gate-type transistor unit formed on the first primary surface (1S1) side of the first semiconductor layer (5). The first semiconductor layer (5) in active region (2) not only reduces JFET resistance, but also serves as a charge-carrying layer, reducing drift zone resistance, and thereby reducing the forward conduction voltage drop of the insulated gate bipolar transistor.