| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can inhibit corrosion of an electrode pad layer and effectively inhibit the occurrence of cracks below the electrode pad layer.SOLUTION: A semiconductor device comprises: a first insulation film 20 which is mainly composed of a silicon oxide and arranged to cover a top face part 3a of a semiconductor substrate 3 and an electrode pad layer 10; a second insulation film 30 which is mainly composed of a silicon nitride and arranged to cover the first insulation film 20; a first opening 40 formed by opening the first insulation film 20 and the second insulation film 30; a bump 14 electrically connected with the electrode pad layer 10 through the first opening 40; and a second opening 42 which is formed as an opening different from the first opening 40 and includes an outer peripheral edge part 42a which pierces the second insulation film 30 in a thickness direction of the second insulation film 30 and is formed in an annular form to surround a periphery of the bump 14 and arranged at a position away from the bump 14. |
