P N DIODE HAVING A CONTROLLED HETEROSTRUCTURE SELF POSITIONED ON HGCDTE FOR INFRARED IMAGERS

摘要

The invention relates to a device comprising at least one p n diode having a heterostructure including an HgCdTe substrate that comprises for each diode: a first portion (4) having a first cadmium concentration; a concentrated portion (11) having a second cadmium concentration greater than the first concentration thereby forming a heterostructure with the first portion (4); and a p+ doped area (9) located in the concentrated portion (11) and extending into the first portion thereby forming a p n junction (10) with an n doped portion of the first portion (4) referred to as a sole plate (1) characterized in that the concentrated portion (11) is located only in the p+ doped area (9) and forms a casing (12) having a given cadmium concentration.