发明名称 |
HYBRID TRANSFORMER STRUCTURE ON SEMICONDUCTOR DEVICES |
摘要 |
Several novel features pertain to a hybrid transformer formed within a semiconductor die having multiple layers. The hybrid transformer includes a first set of windings positioned on a first layer of the die. The first layer is positioned above a substrate of the die. The first set of windings includes a first port and a second port. The first set of windings is arranged to operate as a first inductor. The hybrid transformer includes a second set of windings positioned on a second layer of the die. The second layer is positioned above the substrate. The second set of windings includes a third port, a fourth port and a fifth port. The second set of windings is arranged to operate as a second inductor and a third inductor. The first set of windings and the second set of windings are arranged to operate as a vertical coupling hybrid transformer. |
申请公布号 |
EP2923387(A1) |
申请公布日期 |
2015.09.30 |
申请号 |
EP20130802197 |
申请日期 |
2013.11.21 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
LO, CHI SHUN;LAN, JE- HSIUNG;VELEZ, MARIO FRANCISCO;KIM, JONGHAE |
分类号 |
H01L49/02;H01F19/04;H01F19/08;H01F27/28;H01L23/522;H01L23/64 |
主分类号 |
H01L49/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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