发明名称 HYBRID TRANSFORMER STRUCTURE ON SEMICONDUCTOR DEVICES
摘要 Several novel features pertain to a hybrid transformer formed within a semiconductor die having multiple layers. The hybrid transformer includes a first set of windings positioned on a first layer of the die. The first layer is positioned above a substrate of the die. The first set of windings includes a first port and a second port. The first set of windings is arranged to operate as a first inductor. The hybrid transformer includes a second set of windings positioned on a second layer of the die. The second layer is positioned above the substrate. The second set of windings includes a third port, a fourth port and a fifth port. The second set of windings is arranged to operate as a second inductor and a third inductor. The first set of windings and the second set of windings are arranged to operate as a vertical coupling hybrid transformer.
申请公布号 EP2923387(A1) 申请公布日期 2015.09.30
申请号 EP20130802197 申请日期 2013.11.21
申请人 QUALCOMM INCORPORATED 发明人 LO, CHI SHUN;LAN, JE- HSIUNG;VELEZ, MARIO FRANCISCO;KIM, JONGHAE
分类号 H01L49/02;H01F19/04;H01F19/08;H01F27/28;H01L23/522;H01L23/64 主分类号 H01L49/02
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