发明名称 |
PARASITIC PLASMA PREVENTION IN PLASMA PROCESSING CHAMBERS |
摘要 |
Parasitic plasma in voids in a component of a plasma processing chamber can be eliminated by covering electrically conductive surfaces in an interior of the voids with a sleeve. The voids can be gas holes, lift pin holes, helium passages, conduits and/or plenums in chamber components such as an upper electrode and a substrate support. |
申请公布号 |
SG10201505834V(A) |
申请公布日期 |
2015.09.29 |
申请号 |
SG10201505834V |
申请日期 |
2011.07.18 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
RICCI, ANTHONY;ULLAL, SAURABH;MARTINEZ, LARRY |
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