发明名称 PARASITIC PLASMA PREVENTION IN PLASMA PROCESSING CHAMBERS
摘要 Parasitic plasma in voids in a component of a plasma processing chamber can be eliminated by covering electrically conductive surfaces in an interior of the voids with a sleeve. The voids can be gas holes, lift pin holes, helium passages, conduits and/or plenums in chamber components such as an upper electrode and a substrate support.
申请公布号 SG10201505834V(A) 申请公布日期 2015.09.29
申请号 SG10201505834V 申请日期 2011.07.18
申请人 LAM RESEARCH CORPORATION 发明人 RICCI, ANTHONY;ULLAL, SAURABH;MARTINEZ, LARRY
分类号 主分类号
代理机构 代理人
主权项
地址