| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a single crystal pulling-up method which can grow a single crystal having a high oxygen concentration of at least 1.3×10<SP POS="POST">18</SP>atoms/cm<SP POS="POST">3</SP>irrespective of the size of the single crystal to be pulled up without causing dislocation. <P>SOLUTION: When the single crystal C is pulled up, pressure in a furnace is controlled to be 40-80 torr, and the number of revolution of a crucible is controlled to be 3-8 rpm, and a magnetic field strength ratio (upper part magnetic field/lower part magnetic field) between an upper part magnetic field and a lower part magnetic field which are applied by a pair of upper and lower electromagnetic coils 13 and 14 is controlled to be 0.7-0.95. Also, when the liquid surface M1 of a molten silicon liquid M is 0 (mm) position, the upper direction from the liquid surface M1 in the vertical direction perpendicular to the liquid surface M1 is the positive direction, and the lower direction from the liquid surface M1 is the negative direction, while a zero magnetic field horizontal position to be 0 (Gauss) of magnetic field strength in the vertical direction on the central axis of the single crystal C is controlled between -10 and +100 mm. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
