NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

According to one embodiment, a nonvolatile semiconductor memory device includes an interconnect layer, a stacked body, an insulating layer, a semiconductor pillar, a charge storage layer and a first conductive unit. The stacked body is separated from the interconnect layer in a first direction. The stacked body includes a memory unit and a selection gate provided between the memory unit and the interconnect layer. The insulating layer is provided between the interconnect layer and the stacked body. The semiconductor pillar pierces the stacked body in the first direction. The charge storage layer is provided between the semiconductor pillar and the memory unit. The first conductive unit connects the semiconductor pillar and the interconnect layer. A width of the first conductive unit along a second direction perpendicular to the first direction is wider than a width of the semiconductor pillar along the second direction.

主权项

1. A nonvolatile semiconductor memory device, comprising:
an interconnect layer; a stacked body separated from the interconnect layer in a first direction, the stacked body including
a memory unit including a plurality of electrode films and a plurality of inter-electrode insulating films stacked alternately in the first direction, anda selection gate provided between the memory unit and the interconnect layer; an insulating layer provided between the interconnect layer and the stacked body; a semiconductor pillar piercing the stacked body in the first direction; a charge storage layer provided between the semiconductor pillar and each of the plurality of electrode films; and a first conductive unit connecting the semiconductor pillar and the interconnect layer, a width of the first conductive unit along a second direction perpendicular to the first direction being wider than a width of the semiconductor pillar along the second direction.