METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device includes steps of forming a trench in a surface of a semiconductor substrate of a first conductivity type in a depth direction; forming a conductive layer in the trench, with a first insulating film interposed therebetween; dividing the conductive layer into a gate electrode and an in-trench wiring layer which face each other in the trench and filling a gap between the gate electrode and the in-trench wiring layer with a second insulating film; introducing second-conductivity-type impurities into the entire surface of the semiconductor substrate to form a channel forming region of a second conductivity type; and selectively forming a main electrode region of the first conductivity type in a portion of the channel forming region which is provided along an opening portion of the trench so as to come into contact with the opening portion.

主权项

1. A method for manufacturing a semiconductor device comprising:
a step of forming a trench in a surface of a semiconductor substrate of a first conductivity type in a depth direction; a step of forming a conductive layer in the trench, with a first insulating film interposed therebetween, so as to be buried in the entire trench; a step of dividing the conductive layer into a gate electrode and an in-trench wiring layer which face each other in the trench and filling a gap between the gate electrode and the in-trench wiring layer with a second insulating film; a step of introducing second-conductivity-type impurities into the entire surface of the semiconductor substrate to form a channel forming region of a second conductivity type; and a step of selectively forming a main electrode region of the first conductivity type in a portion of the channel forming region which is provided along an opening portion of the trench so as to come into contact with the opening portion.