| 摘要 |
A non-volatile storage device in one embodiment comprises the following: a first conductive layer for which the product of the number of oxygen ions in said layer and the valence (2) of oxygen is less than the product of the number of cations in said layer and the valence of said cations; an insulating film provided so as to contact said first conductive layer; a hafnium-oxide ferroelectric film provided so as to contact the side of the insulating film facing away from the first conductive layer; a second conductive layer, provided so as to contact the side of the ferroelectric film facing away from the insulating film, for which the product of the number of oxygen ions in said layer and the valence (2) of oxygen is less than the product of the number of cations in said layer and the valence of said cations; and a metal-oxide third conductive layer, provided so as to contact the side of the first conductive layer and/or the second conductive layer facing away from the ferroelectric film, for which the product of the number of oxygen ions in said layer and the valence (2) of oxygen is greater than the product of the number of cations in said layer and the valence of said cations. |
