| 摘要 |
<p>According to one embodiment, a semiconductor light emitting element (110, 111) includes a first electrode (51), a first semiconductor layer (10), a light emitting layer (30), a second semiconductor layer (20), a first insulating portion (41), and a first conductive layer (55). The first electrode (51) includes first and second regions (R1, R2). The first semiconductor layer (10) is separated from the first region (R1), and includes first and second portions (11, 12). The light emitting layer (30) is provided between the second portion (12) and the first region (R1). The second semiconductor layer (20) is provided between the light emitting layer (30) and the first region (R1). The second electrode (62) is provided between the first region (R1) and the second semiconductor layer (20) to contact the second semiconductor layer (20). The first insulating portion (41) is provided between the first region (R1) and the second electrode (62). The first conductive layer (55) is provided between the first portion (11) and the first region (R1), and includes a contact portion (55c) contacting the first portion (11).</p> |
