发明名称 METHOD FOR TREATING A SUBSTRATE
摘要 <p>A method and system for trimming a feature on a substrate is described. During a chemical treatment of the substrate, the substrate is exposed to a gaseous chemistry, such as HF/NH<SUB>3</SUB>, under controlled conditions including surface temperature and gas pressure. An inert gas is also introduced, and the flow rate of the inert gas is selected in order to affect a target trim amount during the trimming of the feature.</p>
申请公布号 EP1730770(B1) 申请公布日期 2015.09.23
申请号 EP20050722845 申请日期 2005.02.08
申请人 TOKYO ELECTRON LTD. 发明人 HIGUCHI, FUMIHIKO;TAKAHASHI, HIROYUKI;KO, AKITERU;YUE, HONGYU;YAMASHITA, ASAO;KAMBARA, HIROMITSU
分类号 H01L21/66;H01L21/311 主分类号 H01L21/66
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