发明名称 |
METHOD FOR TREATING A SUBSTRATE |
摘要 |
<p>A method and system for trimming a feature on a substrate is described. During a chemical treatment of the substrate, the substrate is exposed to a gaseous chemistry, such as HF/NH<SUB>3</SUB>, under controlled conditions including surface temperature and gas pressure. An inert gas is also introduced, and the flow rate of the inert gas is selected in order to affect a target trim amount during the trimming of the feature.</p> |
申请公布号 |
EP1730770(B1) |
申请公布日期 |
2015.09.23 |
申请号 |
EP20050722845 |
申请日期 |
2005.02.08 |
申请人 |
TOKYO ELECTRON LTD. |
发明人 |
HIGUCHI, FUMIHIKO;TAKAHASHI, HIROYUKI;KO, AKITERU;YUE, HONGYU;YAMASHITA, ASAO;KAMBARA, HIROMITSU |
分类号 |
H01L21/66;H01L21/311 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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