| 发明名称 | Semiconductor memory device | ||
| 摘要 | A semiconductor memory device includes a sense amplifier circuit region including first wells disposed in a first direction, a driving circuit region including second wells disposed in a second direction, and a conjunction region disposed at an intersection region of the sense amplifier circuit region and the driving circuit region, a part of each of the first wells extending from the sense amplifier circuit region into the conjunction region, and the second wells being outside of the conjunction region. | ||
| 申请公布号 | US9142265(B2) | 申请公布日期 | 2015.09.22 |
| 申请号 | US201313899949 | 申请日期 | 2013.05.22 |
| 申请人 | SAMSUNG ELECTRONICS CO., LTD. | 发明人 | Jeong In-chul |
| 分类号 | G11C7/06;G11C7/18;G11C5/02 | 主分类号 | G11C7/06 |
| 代理机构 | Lee & Morse, P.C. | 代理人 | Lee & Morse, P.C. |
| 主权项 | 1. A semiconductor memory device, comprising: a sense amplifier circuit region including first wells disposed in a first direction; a driving circuit region including second wells disposed in a second direction; and a conjunction region disposed at an intersection region of the sense amplifier circuit region and the driving circuit region, a part of each of the first wells extending from the sense amplifier circuit region into the conjunction region, and the second wells being only outside of the conjunction region. | ||
| 地址 | Suwon-si, Gyeonggi-do KR | ||