发明名称 SEMICONDUCTOR DEVICE AND CONTROL METHOD OF THE SAME
摘要 A semiconductor device includes a transistor, a diode, a first detection circuit, a second detection circuit, a calculation circuit, and a determination circuit. The diode is connected in reverse parallel with the transistor. The first detection circuit is configured to detect a change rate of a gate voltage of the transistor with respect to time. The second detection circuit is configured to detect a gate current of the transistor. The calculation circuit is configured to calculate a gate capacitance based on the change rate of the gate voltage with respect to time, and the gate current. The determination circuit is configured to determine, based on a determination result of the gate capacitance when a charge is injected to a gate of the transistor, whether a current flows to the diode or to the transistor.
申请公布号 US2015260780(A1) 申请公布日期 2015.09.17
申请号 US201514643518 申请日期 2015.03.10
申请人 TOYOTA JIDOSHA KABUSHIKI KAISHA 发明人 OSANAI Yosuke;KOISHI Ayuki
分类号 G01R31/26 主分类号 G01R31/26
代理机构 代理人
主权项 1. A semiconductor device comprising: a transistor; a diode connected in reverse parallel with the transistor; a first detection circuit configured to detect a change rate of a gate voltage of the transistor with respect to time; a second detection circuit configured to detect a gate current of the transistor; a calculation circuit configured to calculate a gate capacitance based on the change rate of the gate voltage with respect to time, and the gate current; and a determination circuit configured to determine, based on a determination result of the gate capacitance at a time when a charge is injected to a gate of the transistor, whether a current flows to the diode or to the transistor.
地址 Toyota-shi JP