发明名称 |
SEMICONDUCTOR DEVICE AND CONTROL METHOD OF THE SAME |
摘要 |
A semiconductor device includes a transistor, a diode, a first detection circuit, a second detection circuit, a calculation circuit, and a determination circuit. The diode is connected in reverse parallel with the transistor. The first detection circuit is configured to detect a change rate of a gate voltage of the transistor with respect to time. The second detection circuit is configured to detect a gate current of the transistor. The calculation circuit is configured to calculate a gate capacitance based on the change rate of the gate voltage with respect to time, and the gate current. The determination circuit is configured to determine, based on a determination result of the gate capacitance when a charge is injected to a gate of the transistor, whether a current flows to the diode or to the transistor. |
申请公布号 |
US2015260780(A1) |
申请公布日期 |
2015.09.17 |
申请号 |
US201514643518 |
申请日期 |
2015.03.10 |
申请人 |
TOYOTA JIDOSHA KABUSHIKI KAISHA |
发明人 |
OSANAI Yosuke;KOISHI Ayuki |
分类号 |
G01R31/26 |
主分类号 |
G01R31/26 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device comprising:
a transistor; a diode connected in reverse parallel with the transistor; a first detection circuit configured to detect a change rate of a gate voltage of the transistor with respect to time; a second detection circuit configured to detect a gate current of the transistor; a calculation circuit configured to calculate a gate capacitance based on the change rate of the gate voltage with respect to time, and the gate current; and a determination circuit configured to determine, based on a determination result of the gate capacitance at a time when a charge is injected to a gate of the transistor, whether a current flows to the diode or to the transistor. |
地址 |
Toyota-shi JP |