SEMICONDUCTOR DEVICE, RF TAG, AND ELECTRONIC DEVICE

摘要

A semiconductor device with a reduced area is provided. The semiconductor device includes a first transistor and a second transistor. The first transistor includes a first conductor and a second conductor arranged with a distance therebetween, a first insulator over the first conductor and the second conductor, a semiconductor over the first insulator, a second insulator over the semiconductor, a third conductor over the second insulator, and a fourth conductor and a fifth conductor that are in contact with the semiconductor. The first conductor includes a region not overlapping with the third conductor with the semiconductor therebetween, the first conductor includes a region overlapping with the second conductor with the semiconductor therebetween, and one of a source electrode and a drain electrode of the second transistor is electrically connected to the third conductor of the first transistor.

主权项

1. A semiconductor device comprising:
a first transistor; and a second transistor, wherein the first transistor comprises:
a first conductor;a second conductor;a first insulator over the first conductor and the second conductor;a semiconductor over the first insulator;a second insulator over the semiconductor;a third conductor over the second insulator; anda fourth conductor and a fifth conductor that are in contact with the semiconductor, wherein the third conductor includes a first region not overlapping the first conductor, wherein the third conductor includes a second region overlapping the second conductor with the semiconductor therebetween, and wherein one of a source and a drain of the second transistor is electrically connected to the third conductor.