| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can successfully remove an inner wall oxide film and avoid excess digging to ensure a thickness of an element isolation insulation film thereby to prevent the occurrence of leakage current.SOLUTION: A semiconductor device manufacturing method comprises: a process of forming on a silicon substrate 1, a plurality of element isolation trenches 23 and active regions, which extend in a first direction and are repeatedly arranged in a second direction; a process of forming inner wall oxide films 24 on lateral faces of each active region; a process of forming an element isolation insulation film 25 for filling the element isolation trenches to form element isolation regions 2; a process of forming a plurality of mask film patterns which extend in the second direction to expose the active regions and element isolation regions 2 on openings of the mask film patterns, respectively; a process of etching back the element isolation insulation film 25 exposed on the element isolation regions 2 and side etching both lateral faces of each active region to remove the inner wall oxide film 24; and a process of etching back the silicon substrate 1 exposed on the active regions to form a saddle-type fin part 11.</p> |
