Semiconductor Device Having a Charge Compensation Region

摘要

A semiconductor device includes a semiconductor material of a first conductivity type, a body region of a second (opposite) conductivity type extending into the semiconductor material from a main surface of the semiconductor material, a source region of the first conductivity type disposed in the body region, and a channel region extending laterally in the body region from the source region along the main surface. A charge compensation region of the second conductivity type can be provided under the body region which extends in a direction parallel to the main surface and terminates prior to a pn-junction between the source and body regions at the main surface, and/or an additional region of the first conductivity type which has at least one peak doping concentration each of which occurs deeper in the semiconductor material from the main surface than a peak doping concentration of the device channel region.

主权项

1. A semiconductor device, comprising:
a semiconductor material of a first conductivity type having a main surface; a body region of a second conductivity type opposite the first conductivity type extending into the semiconductor material from the main surface; a source region of the first conductivity type disposed in the body region; a channel region extending in the body region from the source region along the main surface of the semiconductor material; a charge compensation region of the second conductivity type disposed under the body region; and an additional region of the first conductivity type disposed in the semiconductor material adjacent the body region, the additional region having a peak doping concentration which occurs deeper in the semiconductor material from the main surface than a peak doping concentration of the channel region.