SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes a semiconductor layer, gate electrodes, an insulating film, source electrodes, and drain electrodes which are provided on the semiconductor layer. Each of the source electrodes and the drain electrodes are spaced in the insulating film from a corresponding gate electrode, such that one end thereof is in contact with the semiconductor layer and the other end thereof is exposed. Further, the semiconductor device includes first field plate electrodes, each of which is provided on a corresponding gate electrode and the insulating film, and second field plate electrodes, each of which is provided on the insulating film between a corresponding first field plate electrode and a corresponding drain electrode. Furthermore, the thickness of the insulating film between each first field plate electrode and the semiconductor layer is smaller than the thickness of the insulating film between each second field plate electrode and the semiconductor layer.

主权项

1. A semiconductor device comprising:
a semiconductor layer; a plurality of gate electrodes on the semiconductor layer; an insulating film overlying the semiconductor layer and at least a portion of each of the gate electrodes, the insulating film including a first surface on a semiconductor layer side thereof and a second surface on a side opposite to the semiconductor layer side; a plurality of source electrodes, each extending inwardly of the insulating film at a location spaced from the location of contact of an adjacent one of the gate electrodes and the semiconductor layer, such that one end of each source electrode contacts the semiconductor layer and the other end of each source electrode is exposed; a plurality of drain electrodes, each extending inwardly of the insulating film at a location farther from an adjacent one of the gate electrodes than a location of the source electrode therefrom, such that one end of each drain electrode contacts the semiconductor layer and the other end of each drain electrode is exposed; first field plate electrodes on the gate electrodes, each field plate electrode including a first portion that is in contact with a corresponding gate electrode and a second portion on the insulating film that extends between the first portion and an adjacent drain electrode; and second field plate electrodes on the insulating film, each of which is provided between the second portion of one of the first field plate electrodes and the adjacent drain electrode, wherein a thickness of the insulating film between the second portion of each first field plate electrode and the semiconductor layer is smaller than a thickness of the insulating film between each second field plate electrode and the semiconductor layer.