RESISTANCE CHANGE MEMORY

摘要

According to one embodiment, a resistance change memory comprises a memory cell array, a write and read circuit, a temperature sensor, and a memory controller. The memory cell array comprises memory cells including magnetic tunnel junction (MTJ) elements. The write and read circuit performs a write operation and a read operation for the memory cells. The temperature sensor outputs temperature information corresponding to a temperature of the memory cell array. The memory controller controls the write operation and the read operation by the write and read circuit in accordance with the temperature information.

主权项

1. A resistance change memory comprising:
a memory cell array comprising memory cells including magnetic tunnel junction (MTJ) elements; a write and read circuit which performs a write operation and a read operation for the memory cells; a temperature sensor which outputs temperature information corresponding to a temperature of the memory cell array; and a memory controller which controls the write operation and the read operation by the write and read circuit in accordance with the temperature information.