SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

A semiconductor memory device according to one embodiment includes a substrate, a first stacked body provided on the substrate, a second stacked body provided on the first stacked body, a first semiconductor pillar extending in the first stacked body and the second stacked body, a first memory film provided between the first semiconductor pillar and the first electrode films, a first interconnect, a second interconnect, a first plug and a second plug. The first stacked body includes a plurality of first electrode films and a plurality of first insulating films. The second stacked body includes a plurality of second electrode films and a plurality of second insulating films. The first plug electrically connects the plurality of second electrode films to each other. The second plug electrically connects the plurality of second electrode films to each other.

主权项

1. A semiconductor memory device, comprising:
a substrate; a first stacked body provided on the substrate, the first stacked body including a plurality of first electrode films and a plurality of first insulating films, each of the plurality of first electrode films and each of the plurality of first insulating films being stacked alternately; a second stacked body provided on the first stacked body, the second stacked body including a plurality of second electrode films and a plurality of second insulating films, each of the plurality of second electrode films and each of the plurality of second insulating films being stacked alternately; a first semiconductor pillar extending in the first stacked body and the second stacked body; a first memory film provided between the first semiconductor pillar and the first electrode films; a first interconnect provided in a region on the second stacked body including a region directly above the first semiconductor pillar, the first interconnect being connected to the first semiconductor pillar; a second interconnect provided in a region on the second stacked body where the first interconnect is not provided, the second interconnect being connected to the second electrode film of the uppermost layer; a first plug electrically connecting the plurality of second electrode films to each other; and a second plug electrically connecting the plurality of second electrode films to each other.