发明名称 |
Method of forming a magnetic tunnel junction structure |
摘要 |
In a particular embodiment, a method is disclosed that includes forming a magnetic tunnel junction (MTJ) structure including a conductive layer on a substrate. The method also includes depositing a sacrificial layer on the conductive layer before depositing a patterning film layer. |
申请公布号 |
US9136463(B2) |
申请公布日期 |
2015.09.15 |
申请号 |
US200711943042 |
申请日期 |
2007.11.20 |
申请人 |
QUALCOMM Incorporated |
发明人 |
Li Xia;Kang Seung H.;Zhu Xiaochun |
分类号 |
H01L21/00;H01L43/12 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
Min Donald D. |
主权项 |
1. A method comprising:
forming a magnetic tunnel junction (MTJ) structure including a conductive layer on a substrate; depositing a sacrificial layer on the conductive layer, the sacrificial layer comprising silicon carbon; depositing an amorphous carbon layer on the sacrificial layer, the sacrificial layer selected to have a chemical structure having substantially no impact on a resolution of a pattern definition with respect to the amorphous carbon layer; depositing one or more hard mask and photo-resist layers on the amorphous carbon layer deposited on the sacrificial layer, the amorphous carbon layer located between the sacrificial layer and the one or more hard mask and photo-resist layers; patterning and removing the one or more hard mask and photo-resist layers and the amorphous carbon layer; and depositing a non-magnetic spacer film on an exposed portion of the sacrificial layer, wherein the sacrificial layer is comprised of the same material as the non-magnetic spacer film. |
地址 |
San Diego CA US |