Memories and methods of forming thin-film transistors using hydrogen plasma doping

摘要

Methods of forming thin-film transistors and memories are disclosed. In one such method, polycrystalline silicon is hydrogen plasma doped to form doped polycrystalline silicon. The doped polycrystalline silicon is then annealed. The hydrogen plasma doping and the annealing are decoupled.

主权项

1. A method of forming a memory cell string, comprising:
forming polycrystalline silicon in an opening in a stack of alternating layers of poly-silicon material and dielectric material to form a pillar of a channel for a NAND string; hydrogen plasma doping the polycrystalline silicon to form doped polycrystalline silicon; in-situ depositing of a deposition material; separately annealing the doped polycrystalline silicon, wherein the hydrogen plasma doping and the annealing are decoupled; and removing the deposition material after annealing the doped polycrystalline silicon.