| 发明名称 |
Multilayer construction |
| 摘要 |
Multilayer construction is disclosed. The multilayer construction includes a II-VI semiconductor layer and a Si3N4 layer disposed directly on the II-VI semiconductor layer. |
| 申请公布号 |
US9136429(B2) |
申请公布日期 |
2015.09.15 |
| 申请号 |
US201414467497 |
申请日期 |
2014.08.25 |
| 申请人 |
3M INNOVATIVE PROPERTIES COMPANY |
发明人 |
Zhang Jun-Ying;Haase Michael A.;Ballen Todd A.;Smith Terry L. |
| 分类号 |
H01L33/06;B82Y20/00;C23C14/02;C23C14/06;C23C16/02;C23C16/34;H01L21/46;H01L33/28;H01L33/46;H01L21/306;H01S5/183;H01S5/347;G02B6/44 |
主分类号 |
H01L33/06 |
| 代理机构 |
|
代理人 |
Dong Yufeng |
| 主权项 |
1. A multilayer construction comprising:
a II-VI semiconductor layer grown on a first substrate; a Si3N4 layer disposed directly on the II-VI semiconductor layer; an oxide layer disposed directly on the Si3N4 layer; an adhesive layer disposed directly on the oxide layer; and a second substrate adhered to the oxide layer using the adhesive layer. |
| 地址 |
St. Paul MN US |
