| 摘要 |
There is provided a ceramic wiring substrate and a method for manufacturing the same, the ceramic wiring substrate having an up-and-down conduction body which is made by forming a porous structure body made of a high melting point metal and then infiltrating a low-resistance metal in an up-and-down conduction hole subsequently formed in a substrate made in a plate shape through sintering a ceramic precursor, the up-and-down conduction body further having a normal composite structure without an abnormally grown particle, a void, a crack and the like and not having a problem of falling off from the substrate, as well as provided a semiconductor device configured by using this ceramic wiring substrate. An intermediate layer 5 formed of at least one selected from a group consisting of Mo, W, Co, Fe, Zr, Re, Os, Ta, Nb, Ir, Ru and Hf is formed on an inner surface of the up-and-down conduction hole 2 of the substrate 3 before being provided with the up-and-down conduction body 4 having the composite structure. |
