| 发明名称 |
FUSE STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME |
| 摘要 |
A fuse structure includes a first fin pattern disposed in a field insulating layer that includes an upper surface that projects above an upper surface of the field insulating layer, a conductive pattern on the field insulating layer that crosses the first fin pattern, a first semiconductor region positioned on at least one side of the conductive pattern, and first and second contacts disposed on the conductive pattern on each side of the first fin pattern. The fuse structure may be included in a semiconductor device. |
| 申请公布号 |
US2015255469(A1) |
申请公布日期 |
2015.09.10 |
| 申请号 |
US201414575647 |
申请日期 |
2014.12.18 |
| 申请人 |
CHOI HYUN-MIN;Maeda Shigenobu |
发明人 |
CHOI HYUN-MIN;Maeda Shigenobu |
| 分类号 |
H01L27/112;H01L23/525;H01L29/788;H01L27/088 |
主分类号 |
H01L27/112 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A fuse structure comprising:
a first fin pattern disposed in a field insulating layer that includes an upper surface that projects above an upper surface of the field insulating layer; a conductive pattern on the field insulating layer that crosses the first fin pattern; a first semiconductor region positioned on at least one side of the conductive pattern; and first and second contacts disposed on the conductive pattern on each side of the first fin pattern. |
| 地址 |
Uiwang-si KR |
