SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

摘要

In accordance with an embodiment, a semiconductor memory device includes a substrate and memory transistors on the substrate. The substrate has a semiconductor layer having impurity diffusion regions which become sources or drains. The memory transistors share the impurity diffusion regions.;Each of the memory transistors has a first insulating film on the substrate, a charge storage layer on the first insulating film, a second insulating film on the charge storage layer, and a control gate on the second insulating film. A bottom surface of the control gate is parallel to a top surface of the charge storage layer.

主权项

1. A semiconductor memory device comprising:
a substrate comprising a semiconductor layer comprising impurity diffusion regions which become sources or drains; and memory transistors, on the substrate, which share the impurity diffusion regions, wherein each of the memory transistors comprises a first insulating film on the substrate, a charge storage layer on the first insulating film, a second insulating film on the charge storage layer, and a control gate on the second insulating film, and a bottom surface of the control gate is parallel to a top surface of the charge storage layer.