| 发明名称 |
CONFORMAL NITRIDATION OF ONE OR MORE FIN-TYPE TRANSISTOR LAYERS |
| 摘要 |
Fin-type transistor fabrication methods and structures are provided having one or more nitrided conformal layers, to improve reliability of the semiconductor device. The method includes, for example, providing at least one material layer disposed, in part, conformally over a fin extending above a substrate, the material layer(s) including a gate dielectric layer; and performing a conformal nitridation process over an exposed surface of the material layer(s), the conformal nitridation process forming an exposed, conformal nitrided surface. |
| 申请公布号 |
US2015255277(A1) |
申请公布日期 |
2015.09.10 |
| 申请号 |
US201414200197 |
申请日期 |
2014.03.07 |
| 申请人 |
GLOBALFOUNDRIES INC. |
发明人 |
TONG Wei Hua;LUO Tien-Ying;SHEN Yan Ping;ZHOU Feng;LIAN Jun;SHI Haoran;CHI Min-hwa;LIU Jin Ping;WANG Haiting;KIM Seung |
| 分类号 |
H01L21/02;H01L29/51;H01L21/324;H01L29/78 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
fabricating a fin-type transistor structure, the fabricating comprising:
providing at least one material layer disposed conformally over a fin extending above a substrate, the at least one material layer comprising a gate dielectric layer; andperforming a conformal nitridation process over an exposed surface of the at least one material layer, the conformal nitridation process forming an exposed, conformal nitrided surface. |
| 地址 |
Grand Cayman KY |
