发明名称 STORAGE DEVICE, MEMORY CONTROLLER AND MEMORY CONTROL METHOD
摘要 According to an embodiment, a storage device includes: a semiconductor memory that includes a multilevel memory cell, stores a first code word and a second code word, and in which a plurality of memory cells connected to one word line can store a plurality of pages; and a controller. The controller performs error correction processing of the first code word read out from one page among the plurality of pages of the semiconductor memory, and the second code word written in a page other than the page corresponding to the first code word among the plurality of pages, re-reads the first code word when the first code word is uncorrectable and the second code word was able to be corrected by the error correction processing, and determines a bit value of the first code word using a re-read result and the second code word after error correction.
申请公布号 US2015256203(A1) 申请公布日期 2015.09.10
申请号 US201414306462 申请日期 2014.06.17
申请人 Kabushiki Kaisha Toshiba 发明人 YAMAZAKI Susumu;Yoshida Kenji
分类号 H03M13/29;G06F11/10 主分类号 H03M13/29
代理机构 代理人
主权项 1. A storage device comprising: a semiconductor memory including one or more word lines and one or more memory cells, and configured to store a first code word and a second code word, the memory cells being capable of respectively storing a plurality of bits, and a plurality of the memory cells being connected to one word line being capable of storing a plurality of pages; and a controller configured to read out the first code word from one page among the plurality of pages of the semiconductor memory, and the second code word written in a page other than the page corresponding to the first code word among the plurality of pages, wherein the controller performs error correction processing using the first and the second code word read out from the semiconductor memory, re-reads the first code word when the first code word has not been able to be corrected, and the second code word has been able to be corrected, by the error correction processing, and determines each bit value of the first code word using a read-out result by the re-reading, and a bit value of each bit of the second code word after error correction.
地址 Minato-ku JP