| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve reliability of a semiconductor device by preventing an occurrence of a reverse current leakage when crystal defect is generated in a drift layer of a Schottky interface of a Schottky diode using a substrate containing SiC. <P>SOLUTION: In a Schottky diode including a Schottky junction part of a drift layer 2 on a semiconductor substrate and a Schottky electrode 4, an acceptor impurity is introduced on a top face of crystal defect 12 reaching a top face of the drift layer 2 with a concentration and at a depth which are defined depending on a metal composing the Schottky electrode 4 to form a p-type semiconductor region 3 thereby to prevent increase in reverse leakage current. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
