| 发明名称 | Photoresistor | ||
| 摘要 | A photoresistor includes a first electrode layer, a photosensitive material layer, and a second electrode layer. The first electrode layer, photosensitive material layer and second electrode layer are stacked with each other. The first electrode layer is located on a first surface of the photosensitive material layer. The second electrode layer is located on a second surface of the photosensitive material layer. The first surface and second surface of the photosensitive material layer are opposite to each other. The first electrode layer includes a carbon nanotube film structure. | ||
| 申请公布号 | US9130104(B2) | 申请公布日期 | 2015.09.08 |
| 申请号 | US201313858722 | 申请日期 | 2013.04.08 |
| 申请人 | Tsinghua University;HON HAI PRECISION INDUSTRY CO., LTD. | 发明人 | Liu Jun-Ku;Li Guan-Hong;Li Qun-Qing;Fan Shou-Shan |
| 分类号 | H01L31/08;H01L31/09;H01L31/0224 | 主分类号 | H01L31/08 |
| 代理机构 | Novak Druce Connolly Bove + Quigg LLP | 代理人 | Novak Druce Connolly Bove + Quigg LLP |
| 主权项 | 1. A photoresistor comprising: a photosensitive material layer comprising a first surface and a second surface opposite to each other; a first electrode layer, located on the first surface, comprising a carbon nanotube film structure, wherein the carbon nanotube film structure consists of a plurality of carbon nanotubes substantially aligned along a single preferred direction; and a second electrode layer located on the second surface. | ||
| 地址 | Beijing CN | ||