SOLID STATE IMAGING DEVICE AND CAMERA SYSTEM

摘要

An MOS type solid state imaging device in which unit pixels 10 each having a photodiode 11, a transfer transistor 12 for transferring the signal of the photodiode 11 to a floating node N11, an amplifier transistor 13 for outputting the signal of the floating node N11 to a vertical signal line 22, and a reset transistor 14 for resetting the floating node N11 are arrayed in a matrix and in which a gate voltage of the reset transistor 14 is controlled by three values of a power source potential (for example 3V), a ground potential (OV), and a negative power source potential (for example −1V).

主权项

1. An imaging device comprising:
a vertical drive circuit; and a plurality of pixels,wherein
each pixel includes:
(a) a photoelectric converter;(b) a floating node;(c) a transfer transistor is configured to transfer a signal of the photoelectric converter to the floating node;(d) an amplifier transistor is configured to output a signal of the floating node to a signal line; and(e) a reset transistor is configured to reset the floating node, the vertical drive circuit is configured to:
supply a first drive signal to a control terminal of the transfer transistor; andsupply a second drive signal to a control terminal of the reset transistor, the second drive signal includes a first level potential higher than a ground potential level, and a second level potential lower than the ground potential level.