SEMICONDUCTOR-ON-INSULATOR WITH BACK SIDE SUPPORT LAYER

摘要

In one embodiment, an integrated circuit with a signal-processing region is disclosed. The integrated circuit comprises a silicon-on-insulator die singulated from a silicon-on-insulator wafer. The silicon on insulator die comprises an active layer, an insulator layer, a substrate, and a strengthening layer. The substrate consists of an excavated substrate region, and a support region, the support region is in contact with the insulator layer. The excavated region covers a majority of the signal-processing region of the integrated circuit.

主权项

1. An integrated circuit comprising:
a silicon-on-insulator die singulated from a silicon-on-insulator wafer, the silicon-on-insulator die having an active layer, a substrate, and an insulator layer, wherein the active layer has a signal-processing region, and wherein the insulator layer is in contact with the substrate and the active layer; an excavated substrate region formed in the substrate; a support region formed in the substrate; and a strengthening layer at least partially located in the excavated substrate region; wherein a total surface area of the excavated substrate region exceeds a total surface area of a majority of the signal-processing region.