发明名称 PRODUCTION METHOD FOR DEPOSITION MASK AND DEPOSITION MASK
摘要 To provide a production method including: a first step of forming a mask member in which a resin film and a magnetic metal member, which has first through-holes and second through-holes, are brought into close contact; a second step in which a peripheral edge of the magnetic metal member is bonded to one end face of a frame; and a third step in which a portion of the film in each first through-hole is irradiated with laser light to form an opening pattern, and a portion of the film in each second through-hole is irradiated with laser light to form a mask-side alignment mark.
申请公布号 US2015246416(A1) 申请公布日期 2015.09.03
申请号 US201514713519 申请日期 2015.05.15
申请人 V TECHNOLOGY CO., LTD 发明人 Mizumura Michinobu
分类号 B23K26/38;B23K26/40;C23C14/04 主分类号 B23K26/38
代理机构 代理人
主权项 1. A production method for a deposition mask for forming a plurality of thin-film patterns on a substrate, the production method comprising: a first step of forming a mask member in which a resin film and a magnetic metal member, which has a plurality of first and second through-holes formed at positions respectively corresponding to the plurality of thin-film patterns and a plurality of substrate-side alignment marks preliminarily formed on the substrate, are brought into close contact with each other, each of the first and second through-holes having a shape and dimension greater those that of the thin-film pattern, and each of the second through-holes having a shape and dimension greater than those of the substrate-side alignment mark; a second step in which the mask member is stretched on one end face of a frame having an opening enclosing the plurality of first and second through-holes of the magnetic metal member, and a peripheral edge of the magnetic metal member is bonded to the end face of the frame; and a third step in which a portion of the film at the position corresponding to the thin-film pattern in each of the first through-holes is irradiated with laser light to form an opening pattern having a shape and dimension the same as those of the thin-film pattern, and a portion of the film at the position corresponding to the substrate-side alignment mark in each of the second through-holes is irradiated with laser light to form a mask-side alignment mark.
地址 Yokohama-shi JP