| 发明名称 |
ETCHANT, ETCHING METHOD USING SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE PRODUCT |
| 摘要 |
Provided is an etchant for a semiconductor process, including a sulfonic acid compound, a halogen ion, nitric acid or a nitric acid ion, an organic cation, and water. |
| 申请公布号 |
WO2015129551(A1) |
申请公布日期 |
2015.09.03 |
| 申请号 |
WO2015JP54679 |
申请日期 |
2015.02.19 |
| 申请人 |
FUJIFILM CORPORATION |
发明人 |
MIZUTANI, ATSUSHI;KAMIMURA, TETSUYA |
| 分类号 |
H01L21/308;C23F1/44 |
主分类号 |
H01L21/308 |
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