| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a lithography apparatus and a lithography method in which both a dimensional variation due to loading effect and a dimensional variation due to the elapsed time of a resist that has been drawn are corrected. <P>SOLUTION: The lithography apparatus 100 comprises an irradiation amount operation unit 44 which operates a first irradiation amount of charged particle beam for each proximity effect density by using a first set of proximity effect correction coefficient and reference irradiation amount, a tolerance of each proximity effect density and a dimensional variation of a pattern due to the standing time, a proximity effect correction coefficient and reference irradiation amount operation unit 50 which acquires a second set of the proximity effect correction coefficient and reference irradiation amount for each drawing position by fitting the first irradiation amount according to an irradiation amount operation expression not using the tolerance and dimensional variation as parameters but using the proximity effect correction coefficient and reference irradiation amount as parameters, an irradiation amount operation unit 56 which operates a second irradiation amount of charged particle beam by using the second set, and a drawing unit 150 which draws a pattern on a sample by using the charged particle beam of second irradiation amount thus operated for each drawing position. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
