发明名称 Integrated circuit constructions having through substrate vias and methods of forming integrated circuit constructions having through substrate vias
摘要 An integrated circuit construction includes a stack of two or more integrated circuit substrates. At least one of the substrates includes through substrate vias (TSVs) individually comprising opposing ends. A conductive bond pad is adjacent one of the ends on one side of the one substrate. A conductive solder mass is adjacent the other end projecting elevationally on the other side of the one substrate. Individual of the solder masses are bonded to a respective bond pad on an immediately adjacent substrate of the stack. Epoxy flux surrounds the individual solder masses. An epoxy material different in composition from the epoxy flux surrounds the epoxy flux on the individual solder masses. Methods of forming integrated circuit constructions are also disclosed.
申请公布号 US9123700(B2) 申请公布日期 2015.09.01
申请号 US201213345422 申请日期 2012.01.06
申请人 Micron Technology, Inc. 发明人 Gandhi Jaspreet S.;Wirz Brandon P.;Sun Yangyang;Woodland Josh D.
分类号 H01L29/40;H01L23/48;H01L23/00;H01L23/29;H01L21/56;H01L25/065 主分类号 H01L29/40
代理机构 Wells St. John, P.S. 代理人 Wells St. John, P.S.
主权项 1. An integrated circuit construction, comprising: a stack of two or more integrated circuit substrates, at least one of the substrates comprising through substrate vias (TSVs) individually comprising opposing ends, a conductive bond pad adjacent one of the ends on one side of the one substrate and a conductive solder mass adjacent the other end projecting elevationally on the other side of the one substrate; individual of the solder masses being bonded to a respective bond pad on an immediately adjacent substrate of the stack; epoxy solder flux surrounding the individual solder masses; and an epoxy material different in composition from the epoxy solder flux surrounding the epoxy solder flux on the individual solder masses.
地址 Boise ID US