发明名称 |
Method of manufacturing semiconductor wafers |
摘要 |
A method of manufacturing semiconductor wafers which facilitates formation of orientation flat lines and allows beveling work without problems. The method of manufacturing semiconductor wafers includes steps wherein a plurality of small-diameter wafers is cut out from a large-diameter semiconductor wafer, the method including: a marking step of forming straight groove-like orientation flat lines by a laser beam so as to cross the respective small-diameter wafers in each row in the large-diameter semiconductor wafer, wherein cutout positions of the small-diameter wafers are aligned in rows in a specific direction, collectively for each of the rows; and a cutting step of cutting out the small-diameter wafers separately from the large-diameter semiconductor wafer, by a laser beam, after the marking step, in such a way that the orientation flat lines are located at required positions in the small-diameter wafers to be obtained. |
申请公布号 |
US9123795(B2) |
申请公布日期 |
2015.09.01 |
申请号 |
US201314087883 |
申请日期 |
2013.11.22 |
申请人 |
FUJIKOSHI MACHINERY CORP.;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY |
发明人 |
Nakamura Yoshio;Ichikawa Daizo;Sumizawa Haruo;Hara Shiro;Khumpuang Sommawan;Ikeda Shinichi |
分类号 |
H01L21/00;H01L21/78 |
主分类号 |
H01L21/00 |
代理机构 |
Birch, Stewart, Kolasch & Birch, LLP |
代理人 |
Birch, Stewart, Kolasch & Birch, LLP |
主权项 |
1. A method of manufacturing semiconductor wafers, in which a plurality of small-diameter wafers is cut out from a large-diameter semiconductor wafer, the method comprising the following steps:
a marking step of forming straight groove-like orientation flat lines by a laser beam so as to cross the respective small-diameter wafers in each row in the large-diameter semiconductor wafer, wherein cutout positions of the small-diameter wafers are aligned in rows in a specific direction, collectively for each of the rows; and a cutting step of cutting out the small-diameter wafers separately from the large-diameter semiconductor wafer by a laser beam, after the marking step, in such a way that the orientation flat lines are located at required positions in the small-diameter wafers to be obtained; an outside diameter finishing step of finishing the cut out small-diameter wafer so as to have a required outside diameter; a beveling step of beveling an outer periphery of the small-diameter wafer into a predefined shape; an etching step of etching the beveled small-diameter wafers; a mirror beveling step of mirror processing a beveled portion of the beveled small-diameter wafer, using a finishing grinding stone; a polishing step of mirror processing the mirror-beveled small-diameter wafers; and a precision cleaning step of cleaning the wafers contaminated through polishing. |
地址 |
Nagano JP |