发明名称 Method of manufacturing semiconductor wafers
摘要 A method of manufacturing semiconductor wafers which facilitates formation of orientation flat lines and allows beveling work without problems. The method of manufacturing semiconductor wafers includes steps wherein a plurality of small-diameter wafers is cut out from a large-diameter semiconductor wafer, the method including: a marking step of forming straight groove-like orientation flat lines by a laser beam so as to cross the respective small-diameter wafers in each row in the large-diameter semiconductor wafer, wherein cutout positions of the small-diameter wafers are aligned in rows in a specific direction, collectively for each of the rows; and a cutting step of cutting out the small-diameter wafers separately from the large-diameter semiconductor wafer, by a laser beam, after the marking step, in such a way that the orientation flat lines are located at required positions in the small-diameter wafers to be obtained.
申请公布号 US9123795(B2) 申请公布日期 2015.09.01
申请号 US201314087883 申请日期 2013.11.22
申请人 FUJIKOSHI MACHINERY CORP.;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY 发明人 Nakamura Yoshio;Ichikawa Daizo;Sumizawa Haruo;Hara Shiro;Khumpuang Sommawan;Ikeda Shinichi
分类号 H01L21/00;H01L21/78 主分类号 H01L21/00
代理机构 Birch, Stewart, Kolasch & Birch, LLP 代理人 Birch, Stewart, Kolasch & Birch, LLP
主权项 1. A method of manufacturing semiconductor wafers, in which a plurality of small-diameter wafers is cut out from a large-diameter semiconductor wafer, the method comprising the following steps: a marking step of forming straight groove-like orientation flat lines by a laser beam so as to cross the respective small-diameter wafers in each row in the large-diameter semiconductor wafer, wherein cutout positions of the small-diameter wafers are aligned in rows in a specific direction, collectively for each of the rows; and a cutting step of cutting out the small-diameter wafers separately from the large-diameter semiconductor wafer by a laser beam, after the marking step, in such a way that the orientation flat lines are located at required positions in the small-diameter wafers to be obtained; an outside diameter finishing step of finishing the cut out small-diameter wafer so as to have a required outside diameter; a beveling step of beveling an outer periphery of the small-diameter wafer into a predefined shape; an etching step of etching the beveled small-diameter wafers; a mirror beveling step of mirror processing a beveled portion of the beveled small-diameter wafer, using a finishing grinding stone; a polishing step of mirror processing the mirror-beveled small-diameter wafers; and a precision cleaning step of cleaning the wafers contaminated through polishing.
地址 Nagano JP