发明名称 Noise shielding techniques for ultra low current measurements in biochemical applications
摘要 A device having an integrated noise shield is disclosed. The device includes a plurality of vertical shielding structures substantially surrounding a semiconductor device. The device further includes an opening above the semiconductor device substantially filled with a conductive fluid, wherein the plurality of vertical shielding structures and the conductive fluid shield the semiconductor device from ambient radiation. In some embodiments, the device further includes a conductive bottom shield below the semiconductor device shielding the semiconductor device from ambient radiation. In some embodiments, the opening is configured to allow a biological sample to be introduced into the semiconductor device. In some embodiments, the vertical shielding structures comprise a plurality of vias, wherein each of the plurality of vias connects more than one conductive layers together. In some embodiments, the device comprises a nanopore device, and wherein the nanopore device comprises a single cell of a nanopore array.
申请公布号 US9121826(B2) 申请公布日期 2015.09.01
申请号 US201414558222 申请日期 2014.12.02
申请人 Genia Technologies, Inc. 发明人 Chen Roger J. A.
分类号 H01L23/552;G01N27/447;H01L21/768 主分类号 H01L23/552
代理机构 Van Pelt, Yi & James LLP 代理人 Van Pelt, Yi & James LLP
主权项 1. A device having an integrated well, comprising: a plurality of vertical structures substantially surrounding a semiconductor device; an opening above the semiconductor device substantially filled with a conductive fluid; more than one conductive layers forming a portion of the integrated well; and an oxide layer between the more than one conductive layers, and wherein the oxide layer is configured to form a capacitor.
地址 Mountain View CA US