发明名称 |
PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS |
摘要 |
A main etching process of forming a recess portion in a multilayer film having a laminated film where a first film and a second film having different relative permitivities are alternately formed on a base silicon film to a preset depth and an over etching process of forming the recess portion until the base silicon film is exposed are performed by introducing a processing gas including a CF-based gas and an oxygen gas and by performing a plasma etching process. In the over etching process, a first over etching process where a flow rate ratio of the oxygen gas to the CF-based gas is increased as compared to the main etching process and a second over etching process where the flow rate ratio of the oxygen gas to the CF-based gas is reduced as compared to the first over etching process are repeatedly performed two or more times. |
申请公布号 |
US2015243521(A1) |
申请公布日期 |
2015.08.27 |
申请号 |
US201314432541 |
申请日期 |
2013.10.31 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
Ogawa Kazuto;Nakagawa Akira;Konishi Hideki |
分类号 |
H01L21/311;H01J37/32;H01L21/67 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
1. A plasma processing method of performing a plasma etching process on a multilayer film formed on a target substrate arranged in a processing chamber with a patterned mask layer as a mask by generating plasma of a processing gas,
wherein the multilayer film includes a laminated film in which a first film and a second film having different relative permitivities are alternately formed on a base silicon film, a main etching process of forming a recess portion in the laminated film to a predetermined depth and an over etching process of further forming the recess portion until the base silicon film is exposed are performed by introducing the processing gas including a fluorocarbon-based gas and an oxygen gas into the processing chamber to generate the plasma and by performing the plasma etching process, and in the over etching process, a first over etching process in which a ratio of a flow rate of the oxygen gas to a flow rate of the fluorocarbon-based gas is set to be increased as compared to the main etching process and a second over etching process in which the ratio of the flow rate of the oxygen gas to the flow rate of the fluorocarbon-based gas is set to be reduced as compared to the first over etching process are repeatedly performed two or more times. |
地址 |
Tokyo JP |